Electro-optical apparatus, manufacturing method thereof, and electronic device

ABSTRACT

There is provided an electro-optical apparatus including an element substrate that includes a display region in which a plurality of light-emitting elements are arranged, and a peripheral region in which a terminal is disposed. The light-emitting element has a structure in which a reflective electrode, an optical adjustment layer, a first electrode, a light-emitting layer, and a second electrode are laminated, and the first electrode is electrically connected to a contact electrode. The terminal has a structure in which a first terminal layer that is formed by a first conductive film which is the same as the reflective electrode, a second terminal layer that is formed by a second conductive film which is the same as the contact electrode, and a third terminal layer that is formed by a third conductive film which is the same as the first electrode are laminated.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. application Ser. No. 15/497,654 filedApr. 26, 2017 which is a Division of U.S. application Ser. No.14/958,028 filed Dec. 3, 2015, which claims priority to Japanese PatentApplication JP 2014-262959, filed Dec. 25, 2014. The disclosures of theprior applications are hereby incorporated by reference herein in itsentirety.

BACKGROUND 1. Technical Field

The present invention relates to an electro-optical apparatus, amanufacturing method thereof, and an electronic device.

2. Related Art

An organic electro luminescence (EL) apparatus, in which pixels that usean organic EL element are disposed in a matrix form in a display regionof an element substrate, is proposed as an example of theelectro-optical apparatus (for example, refer to JP-A-2010-198754).

In detail, JP-A-2010-198754 discloses a top emission structure organicEL apparatus that has an organic EL element in which a reflective layer,a first electrode (pixel electrode), a light-emitting layer, and asecond electrode (counter electrode) are laminated in that order.

Here, in the organic EL apparatus described in JP-A-2010-198754, aplurality of terminals, which include a mounting terminal for mounting adata line driving circuit, a scanning line driving circuit, and thelike, an external connection terminal, and the like, are arranged in aperipheral region outside the display region. The terminals have astructure in which a reflective conductive material such as aluminum(Al) that forms a film by the same process as the reflective layer whichis described above, and a transparent conductive material such as indiumtin oxide (ITO) that forms a film by the same process as the firstelectrode are laminated.

However, in a case where the reflective conductive material and thetransparent conductive material which are described above are directlylaminated, a contact resistance in the terminals is very high. Inaddition, there are times when electrolytic corrosion occurs between thereflective conductive material and the transparent conductive material.As a countermeasure, manufacturing the terminals using another processesis considered, but manufacturing costs rise due to an increase in thenumber of processes.

Meanwhile, JP-A-2010-198754 discloses a terminal in which ITO islaminated on a wiring layer on which titanium (or titanium nitride),aluminum, and titanium (or titanium nitride) are laminated. However, ina case where the same material as the wiring layer is used in thereflective layer, there is a concern that reflectivity of the reflectivelayer is reduced.

SUMMARY

An advantage of some aspects of the invention is to provide anelectro-optical apparatus which is able to reduce a resistance value ofa terminal while preventing a reduction of reflectivity of thereflective electrode, a manufacturing method thereof, and an electronicdevice provided with such an electro-optical apparatus.

An electro-optical apparatus according to an aspect of the inventionincludes an element substrate that includes a display region in which aplurality of light-emitting elements are arranged in a matrix form, anda peripheral region in which a terminal is disposed outside the displayregion. The light-emitting element has a structure in which a reflectiveelectrode, an optical adjustment layer, a first electrode, alight-emitting layer, and a second electrode are laminated, and thefirst electrode is electrically connected to a contact electrode. Theterminal has a structure in which a first terminal layer that is formedby a first conductive film which is in a same layer as the reflectiveelectrode, a second terminal layer that is formed by a second conductivefilm which is in a same layer as the contact electrode, and a thirdterminal layer that is formed by a third conductive film which is in asame layer as the first electrode are laminated.

According to this configuration, in the terminal, it is possible toreduce the resistance value of the terminal while preventing a reductionof reflectivity of the reflective electrode by providing the secondterminal layer that is formed by the second conductive film which is thesame as the contact electrode between the first terminal layer that isformed by the first conductive film which is the same as the reflectiveelectrode and the third terminal layer that is formed by the thirdconductive film which is the same as the first electrode.

In addition, the electro-optical apparatus may have a configuration inwhich the third conductive film includes a transparent conductivematerial, the second conductive film includes a conductive material witha higher conductivity than the third conductive film, and the firstconductive film includes a reflective conductive material.

According to this configuration, in the terminal, it is possible tofurther reduce the resistance value of the terminal than the case inwhich the reflective conductive material and the transparent conductivematerial are directly laminated by providing the second conductive filmthat includes a conductive material with a higher conductivity than thethird conductive film between the first conductive film that includes areflective conductive material and the third conductive film thatincludes a transparent conductive material. In addition, since thereflective electrode is formed by the first conductive film whichincludes a reflective conductive material, it is possible to prevent areduction in reflectivity of the reflective electrode.

In addition, the electro-optical apparatus may have a configuration inwhich the third conductive film includes indium tin oxide, the secondconductive film includes titanium nitride, and the first conductive filmincludes aluminum and copper.

According to this configuration, in the terminal, it is possible toreduce a resistance value of the terminal by providing the secondconductive film which contains titanium nitride between the firstconductive film which includes aluminum and copper and the thirdconductive film which includes indium tin oxide. In addition, since thereflective electrode is formed using the first conductive film whichincludes aluminum and copper, it is possible to prevent a reduction inreflectivity of the reflective electrode.

In addition, the electro-optical apparatus may have a configuration inwhich the first electrode is electrically connected to the reflectiveelectrode via a contact electrode, and the reflective electrode iselectrically connected to a transistor which drives the light-emittingelement.

According to this configuration, since the transistor and the firstelectrode are electrically connected via the reflective electrode, thereflective electrode and the first electrode have the same potential.Thereby, it is possible to perform the light-emitting operation of thelight-emitting element with high reliability while controlling thepotential which is applied from the transistor to the first electrodevia the reflective electrode. In addition, according to thisconfiguration, it is possible to achieve a further improvement in yield.

In addition, the electro-optical apparatus may have a configuration inwhich the reflective electrode is configured by a portion of a powersupply line, a relay electrode which is electrically connected to atransistor that drives the light-emitting element is disposed inside anopening which is formed in the reflective electrode, and the firstelectrode is electrically connected to the relay electrode via thecontact electrode.

According to this configuration, it is possible to improve displayquality by light which is incident from the opening being shielded bythe contact electrode.

An electronic device according to another aspect of the inventionincludes any of the electro-optical apparatuses.

According to this configuration, it is possible to provide an electronicdevice including an electro-optical apparatus in which it is possible toreduce the resistance value of a terminal while preventing a reductionof reflectivity of the reflective electrode.

A manufacturing method of the electro-optical apparatus according tostill another aspect of the invention having a structure that includes adisplay region in which a plurality of light-emitting elements arearranged in a matrix form, and a peripheral region in which a terminalis disposed outside the display region, the light-emitting element has astructure in which a reflective electrode, an optical adjustment layer,a first electrode, a light-emitting layer, and a second electrode arelaminated and the first electrode is electrically connected to a contactelectrode, and the terminal is laminated with a first terminal layer, asecond terminal layer, and a third terminal layer, includes forming thereflective electrode in the display region, and forming the firstterminal layer in the peripheral region by forming a first conductivefilm, and patterning the first conductive film; forming the contactelectrode in the display region, and laminating the second terminallayer on the first terminal layer in the peripheral region by forming asecond conductive film, and patterning the second conductive film; andforming the first electrode in the display region, and laminating thethird terminal layer on the second terminal layer in the peripheralregion by forming a third conductive film, and patterning the thirdconductive film.

According to this method, it is possible to manufacture a terminal inwhich the first terminal layer, the second terminal layer, and the thirdterminal layer are laminated during a process for manufacturing thelight-emitting element using the first conductive film which is the sameas the reflective electrode in the first terminal layer, the secondconductive film which is the same as the contact electrode in the secondterminal layer, and the third conductive film which is the same as thefirst electrode in the third terminal layer. In addition, it is possibleto reduce the resistance value of the terminal while preventing areduction of reflectivity of the reflective electrode.

In addition, the manufacturing method of the electro-optical apparatusmay be a method in which the third conductive film includes atransparent conductive material, the second conductive film includes aconductive material with a higher conductivity than the third conductivefilm, and the first conductive film includes a reflective conductivematerial.

According to this method, in the manufactured terminal, it is possibleto further reduce the resistance value of the terminal than the case inwhich the reflective conductive material and the transparent conductivematerial are directly laminated by forming the second conductive filmthat includes a conductive material with a higher conductivity than thethird conductive film between the first conductive film that includesthe reflective conductive material and the third conductive film thatincludes the transparent conductive material. In addition, since thereflective electrode is formed by the first conductive film whichincludes a reflective conductive material, it is possible to prevent areduction in reflectivity of the reflective electrode.

In addition, the manufacturing method of the electro-optical apparatusmay be a method in which the third conductive film includes indium tinoxide, the second conductive film includes titanium nitride, and thefirst conductive film includes aluminum and copper.

According to this method, in the manufactured terminal, it is possibleto reduce a resistance value of the terminal by forming the secondconductive film which contains titanium nitride between the firstconductive film which includes aluminum and copper and the thirdconductive film which includes indium tin oxide. In addition, since thereflective electrode is formed using the first conductive film whichincludes aluminum and copper, it is possible to prevent a reduction inreflectivity of the reflective electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a planar view illustrating a configuration of an organic ELapparatus according to an embodiment of the invention.

FIG. 2 is a circuit diagram illustrating a configuration of an elementsubstrate which the organic EL apparatus that is illustrated in FIG. 1is provided with.

FIG. 3 is a circuit diagram illustrating a configuration of a pixelcircuit which the organic EL apparatus that is illustrated in FIG. 1 isprovided with.

FIG. 4 is a planar view illustrating a configuration of a pixel whichthe organic EL apparatus that is illustrated in FIG. 1 is provided with.

FIG. 5A is a sectional view using a line segment VA-VA which isillustrated in FIG. 4, and FIG. 5B is an enlarged sectional view of aportion of a pixel which is illustrated in FIG. 5A.

FIG. 6A is a sectional view using a line segment VIA-VIA which isillustrated in FIG. 4, FIG. 6B is a sectional view using a line segmentVIB-VIB which is illustrated in FIG. 4, and FIG. 6C is a sectional viewusing a line segment VIC-VIC which is illustrated in FIG. 4.

FIG. 7 is a sectional view between a display region and a peripheralregion of the organic EL apparatus which is illustrated in FIG. 1.

FIG. 8A is a planar view illustrating a configuration of a terminal, andFIG. 8B is sectional view using a line segment VIIIB-VIIIB which isillustrated in FIG. 8A.

FIGS. 9A to 9E are sectional views for describing a manufacturingprocess of the organic EL apparatus which is illustrated in FIG. 1.

FIG. 10 is a planar view illustrating another configuration example of apixel which an organic EL apparatus according to an embodiment of theinvention is provided with.

FIG. 11 is a sectional view using a line segment XI-XI which isillustrated in FIG. 10.

FIG. 12 is a schematic view illustrating an example of an electronicdevice which is provided with the organic EL apparatus.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Organic EL Apparatus

First, an organic EL apparatus 100 which is illustrated in FIG. 1 willbe described as an embodiment of the invention. The organic EL apparatus100 is a self-luminous type display apparatus which is illustrated as anexample of an “electro-optical apparatus” in the invention. Here, FIG. 1is a planar view schematically illustrating a configuration of theorganic EL apparatus 100.

As shown in FIG. 1, the organic EL apparatus 100 has an elementsubstrate 10 and a protective substrate 70. The element substrate 10 andthe protective substrate 70 are joined using an adhesive, which isomitted from the drawings, in a state of facing each other. Here, forthe adhesive it is possible use, for example, epoxy resin, acrylicresin, or the like.

As a light-emitting element, the element substrate 10 has a displayregion E in which a pixel 20B on which an organic EL element 30B thatemits blue (B) light is disposed, a pixel 20G on which an organic ELelement 30G that emits green (G) light is disposed, and a pixel 20R onwhich an organic EL element 30R that emits red (R) light is disposed arearranged in a matrix form.

The organic EL apparatus 100 is provided with a full color display inwhich the pixel 20B, the pixel 20G, and the pixel 20R are the displayunits. Here, in the description below, there are cases in which thepixel 20B, the pixel 20G, and the pixel 20R are treated collectively asa pixel 20, and there are cases in which the organic EL element 30B, theorganic EL element 30G, and the organic EL element 30R are treatedcollectively as an organic EL element 30.

A color filter layer 50 is provided in the display region E. Within thecolor filter layer 50 a blue color filter layer 50B is disposed on theorganic EL element 30B of the pixel 20B, a green color filter layer 50Gis disposed on the organic EL element 30G of the pixel 20G, and a redcolor filter layer 50R is disposed on the organic EL element 30R of thepixel 20R.

In the embodiment, the pixel 20 in which emitted light of the same coloris obtained is arranged in the Y direction (first direction), and thepixel 20 in which emitted light of different colors is obtained isarranged in the X direction (second direction) which intersects with (isorthogonal to) the Y direction. Accordingly, the disposition of thepixels 20 is a so-called stripe method. According to the arrangement ofthe pixels, the organic EL element 30B, the organic EL element 30G, andthe organic EL element 30R are each disposed in a stripe form, and theblue color filter layer 50B, the green color filter layer 50G, and thered color filter layer 50R are also disposed in a stripe form. Here, thedisposition of the pixels 20 is not limited to the stripe method, andmay be a mosaic method or a delta method.

The organic EL apparatus 100 has a top emission structure. Accordingly,light which is emitted by the organic EL element 30 passes through thecolor filter layer 50 of the element substrate 10 and is emitted asdisplay light from the protective substrate 70 side.

Since the organic EL apparatus 100 has a top emission structure, it ispossible to use an opaque ceramic substrate, a semiconductor substrate,or the like in addition to a transparent quartz substrate, a glasssubstrate, or the like as the base material of the element substrate 10.In the embodiment, a silicon substrate (semiconductor substrate) is usedas the element substrate 10.

A peripheral region F in which an external connection terminal 103 isarranged is provided outside the display region E. A plurality ofexternal connection terminals 103 are arranged along a side of the longside of the element substrate 10 outside the peripheral region F. Inaddition, a data line driving circuit 101 is provided between theplurality external connection terminals 103 and the display region E. Inaddition, a scanning line driving circuit 102 is provided between twosides of the short side of the element substrate 10 and the displayregion E. Here, in the description below, a direction along the longside of the element substrate 10 is the X direction, a direction alongthe short side of the element substrate 10 is the Y direction, and adirection from the protective substrate 70 toward the element substrate10 is the Z(+) direction.

The protective substrate 70 is smaller than the element substrate 10,and is disposed facing the element substrate 10 such that the externalconnection terminals 103 are exposed. The protective substrate 70 is asubstrate with light transmissivity, and is able to use a quartzsubstrate, a glass substrate, or the like. The protective substrate 70has a role of protecting the organic EL element 30 which is arranged inthe display area E from damage, and is provided so as to be wider thanthe display region E.

FIG. 2 is a circuit view illustrating a configuration of the elementsubstrate 10. As shown in FIG. 2, on the element substrate 10, m rows ofscanning lines 12 are provided extending in the X direction, and ncolumns of data lines 14 are provided extending in the Y direction. Inaddition, on the element substrate 10, a power supply line 19 isprovided extending in the Y direction in each column along the datalines 14.

Pixel circuits 110 corresponding to intersection sections of m rows ofscanning lines 12 and n columns of data lines 14 are provided on theelement substrate 10. The pixel circuits 110 form a portion of thepixels 20. m rows×n columns of the pixel circuits 110 are arranged in amatrix form in the display region E.

A reset potential for initialization Vorst is supplied (fed) to thepower supply line 19. Furthermore, although omitted from the drawings,three control lines which supply control signals Gcmp, Gel, and Gorstare provided in parallel to the scanning lines 12.

The scanning lines 12 are electrically connected to the scanning linedriving circuit 102. The data lines 14 are electrically connected to thedata line driving circuit 101. A control signal Ctrl for controlling thescanning line driving circuit 102 is supplied to the scanning linedriving circuit 102. A control signal Ctr2 for controlling the data linedriving circuit 101 is supplied to the data line driving circuit 101.

The scanning line driving circuit 102 generates scanning signals Gwr(1),Gwr(2), Gwr(3), . . . , Gwr(m-1), Gwr(m) in order to scan the scanninglines 12 over a period of a frame in each row according to the controlsignal Ctrl. Furthermore, in addition to the scanning signal Gwr, thescanning line driving circuit 102 supplies the control signals Gcmp,Gel, and Gorst to the control lines. Here, the frame period is a periodin which an image of one cut (frame) is displayed using the organic ELapparatus 100, and for example, if the frequency of a verticalsynchronization signal which includes a synchronization signal is 120Hz, one frame period is approximately 8.3 milliseconds.

The data line driving circuit 101 supplies potential data signals Vd(1),Vd(2), . . . , Vd(n) according to gradation data of the pixel circuit110 to the data lines 14 of 1, 2, . . . , n columns with respect to thepixel circuit 110 which is positioned in a row that is selected by thescanning line driving circuit 102.

FIG. 3 is a circuit view illustrating a configuration of the pixelcircuit 110. As shown in FIG. 3, the pixel circuit 110 has P-channel MOStransistors 121, 122, 123, 124, and 125, the organic EL element 30, anda capacitor 21. The scanning signal Gwr, the control signals Gcmp, Gel,Gorst, and the like which are described above are supplied to the pixelcircuit 110.

The organic EL element 30 has a structure in which a light-emittingfunction layer (light-emitting layer) 32 is interposed by a pixelelectrode (first electrode) 31 and a counter electrode (secondelectrode) 33 which face each other.

The pixel electrode 31 is an anode which supplies a positive hole in thelight-emitting function layer 32, and is formed using a conductivematerial which has light permeability. In the embodiment, an indium tinoxide (ITO) film with a film thickness of, for example, 200 nm is formedas the pixel electrode 31. The pixel electrode 31 is electricallyconnected to a drain of the transistor 124 and one of a source or adrain of the transistor 125.

The counter electrode 33 is a cathode which supplies electrons to thelight-emitting function layer 32, and is formed using a conductivematerial which has light permeability and light reflectivity such as,for example, an alloy of magnesium (Mg) and silver (Ag). The counterelectrode 33 is a common electrode which is provided over a plurality ofpixels 20, and is electrically connected to a power supply line 8. Apotential Vct which is the lowest potential power source in the pixelcircuit 110 is supplied in the power supply line 8.

The light-emitting function layer 32 has a positive hole injectionlayer, a positive hole transport layer, an organic light-emitting layer,an electron transport layer, and the like laminated in that order fromthe pixel electrode 31 side. In the organic EL element 30, thelight-emitting function layer 32 emits light by the positive hole whichis supplied from the pixel electrode 31 and the electrons which aresupplied form the counter electrode 33 being joined in the middle of thelight-emitting function layer 32.

In addition, a power supply line 6 which intersects with each powersupply line 19 is provided on the element substrate 10 so as to extendin the X direction. Here, the power supply line 6 may be provided so asto extend in the Y direction, and may be provided so as to extend inboth the X direction and the Y direction. The transistor 121 iselectrically connected to the power supply line 6 by the source, and isrespectfully electrically connected to the other of the source or drainof the transistor 123 and the source of the transistor 124. In addition,a potential Vel which is the highest potential power source in the pixelcircuit 110 is supplied in the power supply line 6. In addition, one endof the capacitor 21 is electrically connected to the power supply line6. The transistor 121 functions as a driving transistor through whichcurrent flows according to the voltage between a gate and the source ofthe transistor 121.

The gate of the transistor 122 is electrically connected to the scanninglines 12, and one of the source or the drain are electrically connectedto the data lines 14. In addition, the other of the source or the drainof the transistor 122 is respectively electrically connected to the gateof the transistor 121, the other capacitor 21, and one of the source orthe drain of the transistor 123. The transistor 122 is electricallyconnected between the gate of the transistor 121 and the data lines 14,and functions as a write-in transistor which controls the electricalconnection between the gate of the transistor 121 and the data lines 14.

The transistor 123 is electrically connected to the control line by thegate, and is supplied with the control signal Gcmp. The transistor 123controls the electrical connection between the gate and the drain of thetransistor 121, and functions as a threshold compensation transistor.

The transistor 124 is electrically connected to the control line by thegate, and is supplied with the control signal Gel. The drain of thetransistor 124 is respectively electrically connected to one of thesource or the drain of the transistor 125 and the pixel electrode 31 ofthe organic EL element 30. The transistor 124 controls the electricalconnection between the drain of the transistor 121 and the pixelelectrode 31 of the organic EL element 30, and functions as alight-emission control transistor.

The transistor 125 is electrically connected to the control line by thegate, and is supplied with the control signal Gorst. In addition, theother of the source or the drain of the transistor 125 is electricallyconnected to the power supply line 19, and is supplied with the resetpotential Vorst. The transistor 125 functions as an initializationtransistor which controls the electrical connection between the powersupply line 19 and the pixel electrode 31 of the organic EL element 30.

FIG. 4 is a planar view illustrating a configuration of the pixels 20(pixels 20B, 20G, and 20R). FIG. 5A is a sectional view along the Xdirection of the pixels 20B, 20G, and 20R using a line segment VA-VAwhich is illustrated in FIG. 4. FIG. 5B is an enlarged sectional view ofa portion of the pixel 20R which is illustrated in FIG. 5A. FIG. 6A is asectional view along the Y direction of the pixel 20B using a linesegment VIA-VIA which is illustrated in FIG. 4. FIG. 6B is a sectionalview along the Y direction of the pixel 20G using a line segment VIB-VIBwhich is illustrated in FIG. 4. FIG. 6C is a sectional view along the Ydirection of the pixel 20R using a line segment VIC-VIC which isillustrated in FIG. 4.

As shown in FIGS. 4, 5A, and 5B, each of the pixels 20B, 20G, and 20Rare disposed such that a short direction is parallel to the X direction(a long direction is parallel to the Y direction) in order torespectively take a rectangular shape in planar view. In addition, thepixel separation layer 29 is provided among each of the organic ELelements 30B, 30G, and 30R.

The pixel separation layer 29 is made from an insulation layer, andelectrically insulates between the adjacent organic EL elements 30B,30G, and 30R. In the embodiment, a silicon oxide (SiO₂) film with, forexample, a film thickness of 25 nm is formed as the pixel separationlayer 29. The pixel separation layer 29 is provided so as to cover theperipheral edge section of the pixel electrode 31 of each of the pixels20B, 20G, and 20R. That is, an opening 29CT which exposes a portion ofthe pixel electrode 31 of each of the pixels 20B, 20G, and 20R isprovided in the pixel separation layer 29. The opening 29CT specifies alight-emitting region of each of the pixels 20 in order to take arectangular shape in planar view.

As shown in FIGS. 5A, 5B, and 6A to 6C, the organic EL elements 30B,30G, and 30R which are disposed respectively in the pixels 20B, 20G, and20R have a resonant structure (cavity structure) in which a reflectiveelectrode 35, a reflection enhancing layer 36, a protective layer 37, anoptical path adjustment layer 38, the first electrode 31, thelight-emitting layer 32, and the second electrode 33 are laminated on aninterlayer insulation layer (insulation layer) 34. Here, in FIGS. 4, 5A,5B, and 6A to 6C, illustration is omitted of the light-emitting functionlayer 32 and the counter electrode 33 which are described above.

In the resonant structure, it is possible to emit light of a specificwavelength (resonant wavelength) by increasing the strength according toan optical distance between the reflective layer 35 and the secondelectrode 33 which is adjusted according to the optical path adjustmentlayer 38 while light which is emitted by the light-emitting layer 32 isrepeatedly reflected between the reflective layer 35 and the counterelectrode 33.

For example, an insulating material such as silicon oxide (SiO₂) is usedin the interlayer insulation layer 34. Here, in FIG. 5A, although onlythe transistor 124 is indicated below the interlayer insulation layer34, other than the transistor 124, the transistors 121, 122, 123, 124,and 125, which are configured by the scanning lines 12, the data lines14, the power supply line 19, the control line, the power supply line 6,and the pixel circuit 110, the capacitor 21, and the like are disposedbelow the interlayer insulation layer 34. There is a possibility thatconcavities and convexities are formed on the surface of the interlayerinsulation layer 34 according to the transistor, a wiring, or the like,but it is preferable to flatten the surface on which the reflectiveelectrode 35 is formed.

The reflective electrode 35 is disposed by being split in each pixel 20.That is, the reflective electrode 35 is provided in each of the pixels20B, 20G, and 20R. In addition, a gap 35CT is formed between eachadjacent reflective electrode 35. Accordingly, the gap 35CT is formedbetween each adjacent reflective electrode 35, is electrically separatefrom each pixel 20, and is configured such that different potentials areappliable.

The reflective electrode 35 is made from a conductive material which haslight reflectivity, and is formed in a rectangular shape in planar view.The reflective electrode 35 is larger than the pixel electrode 31, andspecifies a reflection region for each pixel 20. In the embodiment, forexample, a film alloy of aluminum (Al) and copper (Cu) (AlCu) with afilm thickness of 100 nm which is a second layer 35 b is formed on atitanium (Ti) film with a film thickness of 30 nm which is a first layer35 a as the reflective electrode 35.

The reflective electrode 35 is electrically connected to the drain ofthe transistor 124, which is described above, via a first contactelectrode 28 (refer to FIGS. 3 and 5A) which is disposed so as to passthrough the interlayer insulation layer 34. In addition, the reflectiveelectrode 35 is electrically connected to one of the source or the drain(not shown in the drawings) of the transistor 125 via the first contactelectrode 28. For the first contact electrode 28, for example, it ispossible to use a conductive material such as tungsten (W), titanium(Ti), or titanium nitride (TiN). In the embodiment, the first layer 35 aof the reflective electrode 35 is connected to the first contactelectrode 28.

The reflection enhancing layer 36 is for increasing reflectivity usingthe reflective electrode 35, and if made from, for example, aninsulation material which has light permeability. The reflectionenhancing layer 36 is disposed so as to cover the surface of thereflective electrode 35. In the embodiment, a silicon oxide (SiO₂) filmwith, for example, a film thickness of 40 nm is formed as the reflectionenhancing layer 36.

The protective layer 37 is provided so as to cover the surface of thereflective electrode 35 on which the gap 35CT is formed. The protectivelayer 37 has a first insulation film 39, and an embedded insulation film40. The first insulation film 39 is provided on the surface of thereflection enhancing layer 36, the reflective electrode 35, and theinterlayer insulation layer 34, and is formed along the gap 35CT.Accordingly, the first insulation film 39 has the concave section 39 awhich corresponds to the gap 35CT. The embedded insulation film 40 isformed so as to be embedded in the concave section 39 a. In theprotective layer 37, the surface on a side which comes into contact withthe optical path adjustment layer 38 is flattened by the embeddedinsulation film which is embedded in the concave section 37 a. In theembodiment, a silicon nitride (SiN) film with, for example, a filmthickness of 80 nm is formed as the first insulation film 39, and asilicon oxide (SiO₂) film is formed as the embedded insulation film 40.

The optical path adjustment layer 38 has insulation films 38 a and 38 bwhich are disposed on the surface of the protective layer 37. Theoptical path adjustment layer 38 performs optical path adjustment ineach pixel 20B, 20G, and 20R according to the optical distance betweenthe reflective electrode 35 and the counter electrode 33.

In detail, the film thickness of the optical path adjustment layer 38becomes larger in order of the pixel 20B, the pixel 20G, and the pixel20R. That is, as shown in FIG. 6A, in the pixel 20B, the insulationfilms 38 a and 38 b are omitted such that, for example, the resonantwavelength (peak wavelength where luminance is maximum) is 470 nm. Asshown in FIG. 6B, in the pixel 20G, the insulation film 38 a isprovided, for example, such that the resonant wavelength is 540 nm. Asshown in FIG. 6C, in the pixel 20R, the insulation films 38 a and 38 bare provided, for example, such that the resonant wavelength is 610 nm.In the embodiment, a silicon oxide (SiO₂) film with, for example, a filmthickness of 40 nm is formed as the insulation film 38 a, and a siliconoxide (SiO₂) film with, for example, a film thickness of 50 nm is formedas the insulation film 38 b. In addition, the reflection enhancing layer36 and the protective layer 37 perform optical path adjustment accordingto the optical distance between the reflective electrode 35 and thecounter electrode 33, and for example, in the pixel 20B, the filmthickness of the reflection enhancing layer 36 and the protective layer37, for example, the resonant wavelength (peak wavelength whereluminance is maximum) is 470 nm.

Thereby, blue (B) light is emitted from the pixel 20B with a peakwavelength of 470 nm, green (G) light is emitted from the pixel 20G witha peak wavelength of 540 nm, and red (R) light is emitted from the pixel20R with a peak wavelength of 610 nm. In the organic EL apparatus 100,color purity of display light which is emitted from each pixel 20 isincreased using the organic EL element 30 which has such a resonantstructure.

The optical path adjustment layer 38 is provided among each of theorganic EL elements 30B, 30G, and 30R. In detail, the optical pathadjustment layer 38 is configured from the same type of material as theembedded insulation film 40, and the optical path adjustment layer 38 isprovided so as to cover the embedded insulation film 40. According tosuch a configuration, the optical path adjustment layer 38 isprocessable according to the resonant wavelength without impairing theflatness of the surface on the pixel electrode 31 side of the protectivelayer 37. In the embodiment, the optical path adjustment layer 38 andthe embedded insulation film 40 are configured using silicon oxide(SiO₂).

As shown in FIGS. 5A, 5B, and 6A to 6C, the pixel electrode 31 isdisposed on the optical path adjustment layer 38. The pixel electrode 31is electrically connected to the reflective electrode 35 via a secondcontact electrode 41. In detail, a contact hole 41CT is provided suchthat the protective layer 37 and the reflection enhancing layer 36 passtherethrough. The contact hole 41CT is positioned below a region whichdoes not overlap with the opening 29CT in planar view, that is, a regionin which the pixel separation layer 29 is formed.

The second contact electrode 41 has a first contact section 41 a and asecond contact section 41 b. The first contact section 41 a is disposedwithin the contact hole 41CT, and is connected to the second layer 35 bof the reflective electrode 35. The second contact section 41 b isdisposed on the surface of the protective layer 37, and is connected tothe pixel electrode 31. In the embodiment, for example, a titaniumnitride (TiN) film is formed as the second contact electrode 41, and thethickness of the second contact section 41 b is formed so as to be 50nm.

As shown in FIGS. 5A, 5B, and 6A to 6C, a portion of the optical pathadjustment layer 38 is formed so as to overlap with the second contactelectrode 41. According to this configuration, it is possible to disposethe second contact electrode 41 in the vicinity of the region among eachof the organic EL elements 30B, 30G, and 30R without impairing theflatness of the surface on the pixel electrode 31 side of the protectivelayer 37. Thereby, it is possible to reduce the size of a region thatdoes not contribute to light emission, and it is possible to increasethe aperture ratio of each pixel 20.

As shown in FIG. 6A, in the pixel 20B, the insulation films 38 a and 38b which configure the optical path adjustment layer 38 are provided in aregion which overlaps with a portion of the second contact electrode 41,or the embedded insulation film 40. The insulation films 38 a and 38 bwhich configure the optical path adjustment layer 38 are not provided onthe surface of a portion of the second contact electrode 41, and thereina conductive material which configures the pixel electrode 31 islaminated on the second contact electrode 41, and the conductivematerial which configures the pixel electrode 31 comes into contact withthe second contact electrode 41.

As shown in FIG. 6B, in the pixel 20G, the insulation film 38 a whichconfigures the optical path adjustment layer 38 is provided in a regionwhich overlaps with a portion of the second contact electrode 41, or theembedded insulation film 40. Then, the contact hole is provided in theinsulation film 38 b, the conductive material which configures the pixelelectrode 31 is disposed inside the contact hole, and the pixelelectrode 31 is connected to the second contact electrode 41. In thepixel 20G, the insulation film 38 b which configures the optical pathadjustment layer 38 is provided substantially on the entire surfaceexcept for the contact hole. In more detail, the insulation film 38 awhich configures the optical path adjustment layer 38 is provided in aregion which overlaps with a portion of the second contact electrode 41,the reflective electrode 35, or the embedded insulation film 40.

As shown in FIG. 6C, in the pixel 20R, the insulation films 38 a and 38b which configure the optical path adjustment layer 38 are provided in aregion which overlaps with a portion of the second contact electrode 41,the reflective electrode 35, or the embedded insulation film 40. Then,the contact hole is provided in the insulation films 38 a and 38 b, theconductive material which configures the pixel electrode 31 is disposedwithin the contact hole, and the pixel electrode 31 is connected to thesecond contact electrode 41.

Here, although omitted from the drawings, the light-emitting functionlayer 32 and the counter electrode 33 which are described above aredisposed on the pixel electrode 31, and furthermore on top, cover thesurface of the element substrate 10, and prevent infiltration ofmoisture, oxygen, and the like in the organic EL element 30 by disposinga sealing layer (passivation film), which flattens the surface of theorganic EL element 30. The color filter layer 50 which is describedabove is disposed on the surface of the sealing layer.

Here, FIG. 7 is a sectional view between the display region E and theperipheral region F of the organic EL apparatus 100. In addition, FIG.8A is a planar view of a configuration of the external connectionterminal 103, and FIG. 8B is sectional view using a line segmentVIIIB-VIIIB which is illustrated in FIG. 8A.

As shown in FIGS. 7, 8A and 8B, in the organic EL apparatus 100 of theembodiment, the external connection terminal 103 has a structure inwhich a first terminal layer 350 that is formed by a first conductivefilm 35LY which is the same as the reflective electrode 35, a secondterminal layer 410 that is formed by a second conductive film 41LY whichis the same as the contact electrode 41, and a third terminal layer 310that is formed by a third conductive film 31LY which is the same as thepixel electrode 31 are laminated in that order in the peripheral regionF which is formed in the display region E.

The first terminal layer 350 is formed with a rectangular shape inplanar view on the surface of the interlayer insulation layer 34. Thereflection enhancing layer 36 is disposed so as to cover the firstterminal layer 350. The first insulation film 39 of the protective layer37 is formed such that the first insulation film 39 covers the surfaceof the interlayer insulation layer 34 on which the first terminal layer350 and the reflection enhancing layer 36 are disposed. The embeddedinsulation film 40 of the protective layer 37 is embedded in a concavesection 39 b which is formed in the first insulation film 39. Using sucha structure, the surface on the second terminal layer 410 side of theprotective layer 37 is flattened.

A first contact hole 410CT though which the reflection enhancing layer36 and the protective layer 37 (the first insulation film 39) pass isformed on the first terminal layer 350. The second terminal layer 410 isdisposed on the surface of the protective layer 37 in a state of beingembedded in the first contact hole 410CT. Thereby, the second terminallayer 410 is laminated on the surface of the first terminal layer 350(the first conductive film 35LY) which is exposed from the first contacthole 410CT.

The optical path adjustment layer 38 is disposed such that the surfaceof the protective layer 37, on which the second terminal layer 410 isdisposed, is covered by the insulation films 38 a and 38 b. A secondcontact hole 310CT which passes through the optical path adjustmentlayer 38 is formed on the second terminal layer 410. The third terminallayer 310 is disposed on the surface of the optical path adjustmentlayer 38 in a state of being embedded in the second contact hole 310CT.Thereby, the third terminal layer 310 is laminated on the surface of thesecond terminal layer 410 (the second conductive film 41LY) which isexposed from the second contact hole 310CT.

The pixel separation layer 29 is disposed so as to cover the surface ofthe optical path adjustment layer 38 on which the second terminal layer410 is disposed. A terminal opening section 290CT which exposes theexternal connection terminal 103 (the third terminal layer 310) isprovided on the pixel separation layer 29.

In the embodiment, the first conductive film 35LY is made from an AlCufilm, the second conductive film 41LY is made from a TiN film, and thethird conductive film 31LY is made from an ITO film. That is, the secondconductive film 41LY is made from a conductive material with higherconductivity than the third conductive film 31LY.

In this case, it is possible to further reduce the resistance value ofthe external connection terminal 103 than in a case where the firstterminal layer 350 (first conductive film 35LY) and the third terminallayer 310 (the third conductive film 31LY) are directly laminated, byproviding the second terminal layer 410 (second conductive film 41LY)between the first terminal layer 350 (first conductive film 35LY) andthe third terminal layer 310 (third conductive film 31LY) in theexternal connection terminal 103. In addition, since the reflectiveelectrode 35 is formed using the first conductive film 35LY, it ispossible to prevent a reduction in reflectivity of the reflectiveelectrode 35.

In addition, when manufacturing the organic EL apparatus 100 of theembodiment, it is possible to manufacture the external connectionterminal 103 in which the first terminal layer 350, the second terminallayer 410, and the third terminal layer 310 are laminated in that orderduring a process for manufacturing the organic EL element 30 using thefirst conductive film 35LY which is the same as the reflective electrode35 in the first terminal layer 350, the second conductive film 41LYwhich is the same as the contact electrode 41 in the second terminallayer 410, and the third conductive film 31LY which is the same as thepixel electrode 31 in the third terminal layer 310.

Organic EL Apparatus Manufacturing Method

In detail, the manufacturing method of the organic EL apparatus 100 ofthe embodiment will be described with reference to FIGS. 9A to 9E. Here,FIGS. 9A to 9E are sectional views for describing a process formanufacturing the organic EL element 30 (30R is exemplified in theembodiment) and the external connection terminal 103 as a manufacturingmethod of the organic EL apparatus 100. In addition, one pixel 20 (20Ris exemplified in the embodiment) in the display region E is illustratedon the right side in FIGS. 9A to 9E, and one external connectionterminal 103 in the peripheral region F is illustrated on the left sidein FIGS. 9A to 9E.

In the embodiment, it is possible to manufacture the external connectionterminal 103 in which the first terminal layer 350, the second terminallayer 410, and the third terminal layer 310 are laminated in that orderduring the process for manufacturing the organic EL element 30.

In detail, as shown in FIG. 9A, in the manufacturing method of theembodiment, first a Ti/AlCu film (the first conductive film 35LY) and anSiO₂ film (the reflection enhancing layer 36) are laminated in thatorder on the surface of the interlayer insulation layer 34, then thereona mask layer (not shown in the drawings) is formed in a shape whichcorresponds to the reflective electrode 35 and the first terminal layer350 using a photolithography technique. Then, the Ti/AlCu film and theSiO₂ film are etched until the surface of the interlayer insulationlayer 34 is exposed, then the mask layer is removed. Thereby, it ispossible to carry out patterning on the Ti/AlCu film and the SiO₂ filmin a shape which corresponds to the reflective electrode 35 and thefirst terminal layer 350.

Next, as shown in FIG. 9B, thereupon an SiN film (the first insulationfilm 39) is formed, and the SiO₂ film (embedded insulation film 40) isformed so as to be embedded in concave sections 39 a and 39 b which areformed in the first insulation film 39. Thereby, the protective layer37, on which the upper surface is flattened, is formed.

Next as shown in FIG. 9C, the contact hole 41CT is formed on thereflective electrode 35 and the first contact hole 410CT is formed onthe first terminal layer 350 so as to pass through the reflectionenhancing layer 36 and the protective layer 37. After this, the TiN film(second conductive film 41YL) which covers the surface of the protectivelayer 37 is formed in a state of being embedded in the contact holes41CT and 410CT. After this, thereupon, a mask layer (not shown in thedrawings) with a shape which corresponds to the second contact electrode41 and the second terminal layer 410 is formed using a photolithographytechnique. Then, the TiN film is etched until the surface of theprotective layer 37 is exposed, then the mask layer is removed. Thereby,it is possible to carry out patterning on the TiN film in a shape whichcorresponds to the second contact electrode 41 and the second terminallayer 410.

Next, as shown in FIG. 9D, thereupon, the optical path adjustment layer38 is formed by laminating the insulation films 38 a and 38 b in thatorder. After this, the contact hole 31CT is formed on the second contactelectrode 41 and the second contact hole 310CT is formed on the secondterminal layer 410 so as to pass through the optical path adjustmentlayer 38.

Next, as shown in FIG. 9E, an ITO film (the third conductive film 31LY)which covers the surface of the optical path adjustment layer 38 isformed in a state of being embedded in the contact holes 31CT and 310CT.After this, thereupon, a mask layer (not shown in the drawings) with ashape which corresponds to the pixel electrode 31 and the third terminallayer 310 is formed using a photolithography technique. Then, the ITOfilm is etched until the surface of the optical path adjustment layer 38is exposed, then the mask layer is removed. Thereby, it is possible tocarry out patterning on the ITO film in a shape which corresponds to thepixel electrode 31 and the third terminal layer 310. After this, a SiO₂film (the pixel separation layer 29) is formed, then the opening 29CT isformed on the pixel electrode 31, and the terminal opening section 290CTis formed on the third terminal layer 310.

In the manner above, in the manufacturing method of the embodiment, itis possible to manufacture the external connection terminal 103 in whichthe first terminal layer 350, the second terminal layer 410, and thethird terminal layer 310 are laminated in that order during a processfor manufacturing the organic EL element 30 using the first conductivefilm 35LY which is the same as the reflective electrode 35 in the firstterminal layer 350, the second conductive film 41LY which is the same asthe second contact electrode 41 in the second terminal layer 410, andthe third conductive film 31LY which is the same as the pixel electrode31 in the third terminal layer 310.

In addition, in the manufacturing method of the embodiment, it ispossible to further reduce the resistance value of the externalconnection terminal 103 than in a case where the first terminal layer350 (first conductive film 35LY) and the third terminal layer 310 (thirdconductive film 31LY) are directly laminated by providing the secondterminal layer 410 (second conductive film 41LY) between the firstterminal layer 350 (first conductive film 35LY) and the third terminallayer 310 (third conductive film 31LY). In addition, since thereflective electrode 35 is formed using the first conductive film 35LY,it is possible to prevent a reduction in reflectivity of the reflectiveelectrode 35.

In addition, the organic EL apparatus 100 of the embodiment isconfigured such that the transistor 124 and the reflective electrode 35are electrically connected via the first contact electrode 28 which isdescribed above, and the reflective electrode 35 and the pixel electrode31 are electrically connected via the second contact electrode 41. Thatis, the pixel electrode 31 is electrically connected to the transistor124 via the reflective electrode 35.

Thereby, in the organic EL apparatus 100 of the embodiment, a case wherea portion of a power supply line configures the reflective electrode,and a case where the power supply line and the reflective electrode areelectrically connected are different, and the reflective electrode 35and the pixel electrode 31 have the same potential due to the reflectiveelectrode 35 and the pixel electrode 31 being electrically connected.Thereby, it is possible to achieve a further improvement in yield sinceit is possible to avoid a short between the power supply line and thepixel electrode, which is generated by a defect or the like in theinsulation layer between the reflective electrode 35 and the pixelelectrode 31 (the reflection enhancing layer 36, the protective layer37, the optical path adjustment layer 38, and the like).

In addition, in the organic EL apparatus 100 of the embodiment, by sucha configuration, it is possible to perform the light-emitting operationof the organic EL element 30 with high reliability while controlling thepotential which is applied from the transistor 124 to the pixelelectrode 31 via the reflective electrode 35.

In addition, in the organic EL apparatus 100 of the embodiment, thecontact electrode 41 which is described above has the first contactsection 41 a which is connected to the reflective electrode 35 in astate of being embedded in the contact hole 41CT, and the second contactsection 41 b which is connected to the pixel electrode 31 in a state ofcovering the surface of the optical path adjustment layer 38. In thiscase, it is possible to effectively connect the reflective electrode 35and the pixel electrode 31 via the second contact electrode 41.

Furthermore, in the organic EL apparatus 100 of the embodiment, thesecond contact section 41 b functions as an etching stopper for theoptical path adjustment layer 38 and it is possible to increase theaperture ratio of each pixel 20 when patterning is carried out on theoptical path adjustment layer 38 in a predetermined shape by an endsection of at least a portion of the optical path adjustment layer 38which is described above being positioned on the surface of the secondcontact section 41 b. In addition, in the external connection terminal103, it is possible for the second terminal layer 410 to function as anetching stopper for the optical path adjustment layer 38.

Here, in the organic EL apparatus 100 of the embodiment, since thesurface of the protective layer 37 which is described above on the sidewhich comes in contact with the optical path adjustment layer 38 isflattened, it is possible to accurately perform optical path adjustmentbetween the reflective electrode 35 and the pixel electrode 31 byadjusting the thickness of the optical path adjustment layer 38 in eachpixel 20. Thereby, it is possible to perform the light-emittingoperation for the organic EL element 30 with good color reproducibilityusing the resonant structure which is described above. In addition, inthe external connection terminal 103 a step due to the first terminallayer 350 or the like is flattened using the protective layer 37.Accordingly, it is possible to flatten a region in which a plurality ofexternal connection terminals 103 are provided, and it is possible toreliably perform connection to an external circuit.

In addition, in the organic EL apparatus 100 of the embodiment, the endsection of the pixel electrode 31 which is disposed on the surface ofthe optical path adjustment layer 38 is able to be positioned furtheroutside than a position at which the concave section 39 a is formedsince the optical path adjustment layer 38, which is disposed on thesurface of the protective layer 37 which is described above, is alsoflattened. Thereby, it is possible to increase the aperture ratio of thepixels 20, that is, the aperture area (light-emitting area) of theopening 29CT which specifies the light-emitting region of the pixels 20which is described above.

In addition, in the organic EL apparatus 100 of the embodiment, an endsection of at least a portion of the optical path adjustment layer 38(insulation films 38 a and 38 b) is disposed so as to be positioned onthe surface of the first insulation film 39 which is described above.Meanwhile, a silicon oxide (SiO₂) film is used in the optical pathadjustment layer 38 (insulation films 38 a and 38 b) and the embeddedinsulation film 40, and a silicon nitride (SiN) film with an etchingrate lower than the silicon oxide (SiO₂) film is used in the firstinsulation film 39.

In this case, it is possible to selectively etch silicon oxide withrespect to silicon nitride by, for example, dry etching usingfluorine-based gas. Accordingly, it is possible for the first insulationfilm 39 to function as an etching stopper for the optical pathadjustment layer 38 while protecting the embedded insulation film 40when patterning is carried out on the optical path adjustment layer 38in a predetermined shape.

MODIFICATION EXAMPLE

Next, an organic EL apparatus 200 which is illustrated in FIGS. 10 and11 will be described as a modification example of the organic ELapparatus 100. Here, FIG. 10 is a planar view illustrating aconfiguration of the pixels 20 (pixels 20B, 20G, and 20R). FIG. 11 is asectional view of the pixel 20G using the line segment XI-XI which isillustrated in FIG. 10. In addition, in the description below, the partswhich are the same as the organic EL apparatus 100 described above willbe omitted from the description and given the same reference numerals inthe drawings.

As shown in FIGS. 10 and 11, the organic EL apparatus 200 is providedwith a reflective electrode 60 which is configured by a portion of thepower supply line 6 in place of the reflective electrode 35 which isdisposed so as to be split into each pixel 20. That is, the reflectiveelectrode 60 is disposed in common to each of the pixels 20B, 20G, and20R.

In addition, as shown in FIG. 3, in the power supply line 6, a source ofthe transistor 121 and an end of the capacitor 21 are connected.Accordingly, the reflective electrode 60 reflects light from thelight-emitting function layer 32 side, and fulfills the role ofsupplying the potential Vel which is the highest potential power sourceto the pixel circuit 110. In the same manner as the first contactelectrode 28, a contact electrode is provided in the interlayerinsulation layer (insulation layer) 34.

In addition, the organic EL apparatus 200 is provided with a relayelectrode 61 which is electrically connected to the first contactelectrode 28. An opening 60CT with a rectangular shape in planar view isformed in each pixel 20. The contact hole 60CT is a hole section throughwhich the reflective electrode 60 passes through, and the relayelectrode 61 is disposed inside the opening 60CT.

In the embodiment, for example, a film alloy of aluminum (Al) and copper(Cu) (AlCu) with a film thickness of 100 nm is formed on a titanium (Ti)film with a film thickness of 30 nm as the reflective electrode 60 andthe relay electrode 61.

In addition, the reflection enhancing layer 36 is omitted in the organicEL apparatus 200, and the organic EL apparatus 200 is provided with anoptical adjustment layer 62 in place of the protective layer 37 and theoptical path adjustment layer 38. The optical adjustment layer 62 coversthe surface of the reflective electrode 60 on which the opening 60CT isformed, and has a first insulation film 63 which has a concave section63 a that is formed inside the opening 60CT, an embedded insulation film64 which is embedded in the concave section 63 a, and a secondinsulation film 66 which is disposed on the surface of the firstinsulation film 63.

In addition, the organic EL apparatus 200 is provided with a secondcontact electrode 67 which is electrically connected to the pixelelectrode 31 in place of the second contact electrode 41. The secondcontact electrode 67 has a first contact section 67 a which is connectedto the relay electrode 61, and a second contact electrode 67 b which isconnected to the pixel electrode 31. The contact hole 67CT is a holesection through which the first insulation film 63 passes, and the firstcontact section 67 a is formed so as to be embedded in the contact hole67CT. The second contact section 67 b is disposed on the surface of thesecond insulation film 66.

In the optical adjustment layer 62, the first insulation film 63 and theembedded insulation film 64 function as the protective layer. Inaddition, the second insulation film 66 functions as the optical pathadjustment layer.

The second insulation film 66 is disposed so as to cover the firstinsulation film 63 and surface of the second contact section 67 b. Thepixel electrode 31 is connected to the contact electrode 67 (secondcontact section 67 b) via the contact hole 31CT which is formed on thesecond insulation film 66.

Here, in the embodiment, a silicon nitride (SiN) film is formed as thefirst insulation film 63, and a silicon oxide (SiO₂) film is formed asthe embedded insulation film 64 and the second insulation film 66.

In addition, the film thickness of the optical adjustment layer 62becomes larger in order of the pixel 20B, the pixel 20G, and the pixel20R. That is, in the pixel 20B, the first insulation film 63 is providedsuch that, for example, the resonant wavelength (peak wavelength whereluminance is maximum) is 470 nm. In the pixel 20G, the first insulationfilm 63 and the second insulation film 66 are provided such that, forexample, the resonant wavelength is 540 nm. In the pixel 20R, the firstinsulation film 63, the second insulation film 66, and a thirdinsulation film (not shown in the drawings) are provided such that, forexample, the resonant wavelength is 610 nm.

Here, in the embodiment, the reflection enhancing layer 36 is omitted,but there may be a configuration in which the reflection enhancing layer36 is provided between the first insulation film 63 and the reflectiveelectrode 60.

In the organic EL apparatus 200 which has the configuration as above,the transistor 124 and the pixel electrode 31 are electrically connectedvia the relay electrode 61 and the contact electrode 67. In addition,the contact electrode 67 is provided so as to cover the relay electrode61 and the opening 60CT. Then, the contact electrode 67 is provided soas to overlap with at least a portion of the reflective electrode 60 inplanar view. Then, the contact electrode 67 has a light-shieldingproperty. According to this configuration, it is possible to improvedisplay quality by light which is incident from the opening 60CT beingshielded by the contact electrode 67. Here, in the embodiment, forexample, a titanium nitride (TiN) film with a thickness of 500 nm isformed as the contact electrode 67.

In the organic EL apparatus 200 of the embodiment, in the same manner asthe organic EL apparatus 100 which is described above, it is possible tomanufacture the external connection terminal 103 in which the firstterminal layer 350, the second terminal layer 410, and the thirdterminal layer 310 are laminated in that order during a process formanufacturing the organic EL element 30 using the first conductive film35LY which is the same as the reflective electrode 35 in the firstterminal layer 350, the second conductive film 41LY which is the same asthe contact electrode 67 in the second terminal layer 410, and the thirdconductive film 31LY which is the same as the pixel electrode 31 in thethird terminal layer 310.

Accordingly, in the organic EL apparatus 200 of the embodiment, in thesame manner as the organic EL apparatus 100 which is described above, itis possible to further reduce the resistance value of the externalconnection terminal 103 than in a case where the first terminal layer350 (first conductive film 35LY) and the third terminal layer 310 (thirdconductive film 31LY) are directly laminated, by forming the secondterminal layer 410 (second conductive film 41LY) between the firstterminal layer 350 (first conductive film 35LY) and the third terminallayer 310 (third conductive film 31LY). In addition, since thereflective electrode 35 is formed using the first conductive film 35LY,it is possible to prevent a reduction in reflectivity of the reflectiveelectrode 35.

Here, although the description is omitted, the manufacturing method ofthe organic EL apparatus 200 of the embodiment is able to obtain thesame effects using the same method as the manufacturing method of theorganic EL apparatus 100 which is described above.

That is, it is possible to manufacture the external connection terminal103 in which the first terminal layer 350, the second terminal layer410, and the third terminal layer 310 are laminated in that order duringa process for manufacturing the organic EL element 30 using the firstconductive film 35LY which is the same as the reflective electrode 35 inthe first terminal layer 350, the second conductive film 41LY which isthe same as the second contact electrode 67 in the second terminal layer410, and the third conductive film 31LY which is the same as the pixelelectrode 31 in the third terminal layer 310.

In addition, it is possible to further reduce the resistance value ofthe external connection terminal 103 than in a case where the firstterminal layer 350 (first conductive film 35LY) and the third terminallayer 310 (third conductive film 31LY) are directly laminated, byproviding the second terminal layer 410 (second conductive film 41LY)between the first terminal layer 350 (first conductive film 35LY) andthe third terminal layer 310 (third conductive film 31LY). In addition,since the reflective electrode 35 is formed using the first conductivefilm 35LY, it is possible to prevent a reduction in reflectivity of thereflective electrode 35.

Electronic Device

Next, a head-mounted display 1000 which is illustrated in FIG. 12 isdescribed as an example of an electronic device which is provided withthe organic EL apparatuses 100 and 200. Here, FIG. 12 is a schematicdiagram illustrating a configuration of the head-mounted display 1000.

As shown in FIG. 12, the head-mounted display 1000 has two displaysections 1001 which are provided to correspond to left and right eyes.An observer M is able to see characters, images, and the like which aredisplayed on the display sections 1001 by mounting the head-mounteddisplay 1000 on their head as glasses. For example, if an image isdisplayed taking into account a parallax in the left and right displaysections 1001, it is also possible to enjoy viewing three-dimensionalmoving images.

The organic EL apparatuses 100 and 200 are used in the display sections1001. In the organic EL apparatuses 100 and 200, it is possible toreduce the resistance value of the external connection terminal 103while preventing a reduction of reflectivity of the reflective electrode35 which is described above. Accordingly, it is possible to preventgeneration of point defects and provide the head-mounted display 1000with a high-quality display by mounting the organic EL apparatuses 100and 200 in the display sections 1001.

Here, the invention is not necessarily limited to the embodimentsdescribed above, and it is possible to add various modifications withoutdeviating from the gist of the invention.

In detail, the electro-optical apparatus to which the invention isapplied is not limited to an organic EL apparatus which is provided withthe organic EL element as the light-emitting element which is describedabove, and it is possible to widely apply the invention to, for example,an electro-optical apparatus which is provided with a self-luminouslight-emitting element such as an inorganic EL element or an LED.

In addition, the electronic device to which the present invention isapplied is not limited to the head-mounted display 1000 which isdescribed above, and it is possible, for example, to give the example ofan electronic device which uses the electro-optical apparatus to whichthe invention is applied in a head-up display, an electronic viewfinderof a digital camera, a portable information terminal, and a displaysection such as a navigator.

The entire disclosure of Japanese Patent Application No.:2014-262959,filed Dec. 25, 2014 is expressly incorporated by reference herein.

What is claimed is:
 1. An electro-optical apparatus comprising: asubstrate; a first electrode; a light-emitting layer disposed betweenthe first electrode and the substrate; an optical path adjustment layerdisposed between the light-emitting layer and the substrate; areflective electrode disposed between the optical path adjustment layerand the substrate; a second electrode disposed between thelight-emitting layer and the optical path adjustment layer; a pixelseparation layer made from an insulation layer; a terminal including afirst terminal layer, a second terminal layer, and a third terminallayer, wherein the first terminal layer and the reflective electrode areformed by a first conductive film, wherein the second terminal layer anda contact electrode are formed by a second conductive film, wherein thethird terminal layer and the first electrode are formed by a thirdconductive film, wherein the pixel separation layer has an opening whichexposes a portion of the second electrode and covers a peripheral edgesection of the second electrode, and wherein the contact electrode isprovided so as not to overlap the opening of the pixel separation layerin plan view.
 2. The electro-optical apparatus according to claim 1,wherein the third conductive film includes a transparent conductivematerial, the second conductive film includes a conductive material witha higher conductivity than the third conductive film, and the firstconductive film includes a conductive material.
 3. The electro-opticalapparatus according to claim 2, wherein the third conductive filmincludes indium tin oxide, the second conductive film includes titaniumnitride, and the first conductive film includes aluminum and copper. 4.The electro-optical apparatus according to claim 1, wherein the firstelectrode is electrically connected to the reflective electrode via thecontact electrode, and the reflective electrode is electricallyconnected to a transistor.
 5. The electro-optical apparatus according toclaim 1, wherein the reflective electrode is configured by a portion ofa power supply line, a relay electrode which is electrically connectedto a transistor is disposed inside an opening which is formed in thereflective electrode, and the first electrode is electrically connectedto the relay electrode via the contact electrode.
 6. The electro-opticalapparatus according to claim 1, further comprising a protective layerdisposed between the optical path adjustment layer and the reflectiveelectrode.
 7. The electro-optical apparatus according to claim 6,wherein the protective layer has a contact hole, and the contactelectrode is electrically connected to the reflective electrode via thecontact hole.
 8. An electronic device comprising: the electro-opticalapparatus according to claim
 1. 9. An electronic device comprising: theelectro-optical apparatus according to claim
 2. 10. An electronic devicecomprising: the electro-optical apparatus according to claim
 3. 11. Anelectronic device comprising: the electro-optical apparatus according toclaim
 4. 12. An electronic device comprising: the electro-opticalapparatus according to claim
 5. 13. An electronic device comprising: theelectro-optical apparatus according to claim
 6. 14. An electronic devicecomprising: the electro-optical apparatus according to claim 7.